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Journal of Semiconductor Technology and Science

Journal of Semiconductor Technology and Science期刊基本信息

  • 簡稱:J SEMICOND TECH SCI
  • 大類:工程技術(shù)
  • 小類:工程:電子與電氣
  • ISSN:1598-1657
  • IF值:0.407
  • 是否SCI:SCIE
  • 是否OA:No
  • 出版地:SOUTH KOREA
  • 年文章數(shù):114
  • 審稿速度:較慢,6-12周
  • 平均錄用比例:容易
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Journal of Semiconductor Technology and Science中文簡介

《半導(dǎo)體技術(shù)與科學(xué)》雜志的出版,旨在為從事更廣泛集成電路技術(shù)的研發(fā)人員提供一個論壇。、超大規(guī)模集成電路制造工藝技術(shù)、器件技術(shù)、電路設(shè)計、封裝、測試等新技術(shù)的不斷應(yīng)用。當(dāng)IC被發(fā)明時,這些人在一個地方一起工作,并且了解從裸硅到封裝測試的每一個細(xì)節(jié)。然而,隨著集成電路隨著摩爾曲線的發(fā)展而發(fā)展,深入的知識內(nèi)容呈爆炸式增長,我們個人的專業(yè)知識也必須縮小。因此,技術(shù)社會中出現(xiàn)了不同的分支,使得作為一個整體的溝通變得更加困難。然而,漁夫總是知道,他可以在溫暖和寒冷的水相遇的邊界捕獲更多的魚。因此,我們決定打破知識壁壘,為從事VLSI相關(guān)技術(shù)工作的人員提供共同的課題“設(shè)備與設(shè)計集成”的溝通渠道。關(guān)于影響器件的核心技術(shù)的條約,包括CMOS和MEMS器件,從基片到柵極的制造及其表征和分析是我們的主要重點(diǎn)。另一個重點(diǎn)是如何使器件在系統(tǒng)中發(fā)揮作用,并對其進(jìn)行驗證設(shè)計。這個設(shè)備與設(shè)計論壇應(yīng)該提供更好地利用其他信息,并提高整體超大規(guī)模集成電路技術(shù),最終更好地服務(wù)于創(chuàng)建更高效的設(shè)備和系統(tǒng)。

Journal of Semiconductor Technology and Science英文簡介

Journal of Semiconductor Technology and Science is published to provide a forum for R&D people involved in wider scope of the integrated circuit technology, i.e., VLSI fabrication process technology, device technology, circuit design, packaging, test and other novel applications of this ever scaling technology. When IC was invented, these people worked together in one place, and understood every details of the flow from bare silicon to package testing. However, as the IC evolves with Moore’s curve, in-depth knowledge content has exploded, and our individual expertise has to become narrowed down. As a result, different branches in the technical society were created, and have made it more difficult to communicate as a whole. The fisherman, however, always knows that he can capture more fish at the border where warm and cold-water meet. Thus, we decided to break the knowledge barrier, by providing communication channel for people working in relevant VLSI technology in common subject “Device & Design Integration”. Treaties on core technology that will affect the device including CMOS and MEMS devices, from the substrate to gate fabrication and its characterization and analysis are our major focus. The other focus is how to make the device function in a system and its verification the design. This device & design forum should provide better use of the other information and enhance the overall VLSI technology, eventually serving better to create more efficient devices and systems.

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